AON3814 20v n-channel mosfet v ds i d (at v gs =4.5v) 6a r ds(on) (at v gs = 4.5v) < 17m w r ds(on) (at v gs = 4v) < 18.5m w r ds(on) (at v gs = 3.1v) < 23m w r ds(on) (at v gs = 2.5v) < 24m w esd protected symbol v ds the AON3814 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected. this device is suitab le for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v drain-source voltage 20 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view g1 g2 d1 s1 d2 s2 v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl t c =70c a maximum junction-to-lead c c/w c/w maximum junction-to-ambient a 30 95 40 p d w 2.5 i d 6 5.3 40 v v 12 gate-source voltage drain-source voltage 20 c pulsed drain current b continuous drain current f t c =25c power dissipation f maximum junction-to-ambient a c/w r q ja 40 75 50 typ t c =25c 1.6 t c =70c junction and storage temperature range -55 to 150 thermal characteristics units max parameter g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view g1 g2 d1 s1 d2 s2 general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.3 0.7 1.1 v i d(on) 40 a 12.5 17 t j =125c 18.5 24 12.9 18.5 m w 14 23 m w 15.6 24 m w 23 m w g fs 33 s v sd 0.6 1 v i s 3.5 a c iss 730 920 1100 pf c oss 110 155 200 pf c rss 45 75 105 pf r g 2.4 k w q g 8.8 11 13 nc q gs 1.6 2 2.4 nc q 1.9 3.2 4.5 nc on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =6a reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz v ds =v gs i d =250 m a v ds =0v, v gs = 10v gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =6a v gs =1.8v, i d =6a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage v gs =4v, i d =6a v gs =3.1v, i d =6a v gs =2.5v, i d =6a v gs =0v, v ds =0v, f=1mhz total gate charge v gs =4.5v, v ds =10v, i d =6a gate source charge gate drain charge switching parameters maximum body-diode continuous current input capacitance output capacitance dynamic parameters gate resistance q gd 1.9 3.2 4.5 nc t d(on) 0.3 m s t r 0.6 m s t d(off) 7.9 m s t f 4.4 m s turn-off fall time gate drain charge turn-on delaytime turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1.7 w , r gen =3 w a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user 's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. f. the power dissipation and current rating is bas ed on the t 10s thermal resistance, and current rating is also limited by wire-bonding. AON3814 20v n-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 5 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) v gs =2.5v v gs =3.1v 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =6a v gs =2.5v i d =6a v gs =4v i d =6a 25 c 125 c v ds =5v v gs =1.8v v gs =4.5v 0 10 20 30 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2v 4v 10v 3v 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 5 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) v gs =2.5v v gs =3.1v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 125 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =6a v gs =2.5v i d =6a v gs =4v i d =6a 5 10 15 20 25 30 35 40 0 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =1.8v v gs =4.5v i d =6a 25 125 0 10 20 30 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2v 4v 10v 3v AON3814 20v n-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 0 1 2 3 4 5 0 2 4 6 8 10 12 14 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) c oss c rss v ds =10v i d =6a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t a =25 c 100 m s 40 0 1 2 3 4 5 0 2 4 6 8 10 12 14 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =10v i d =6a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t a =25 c 100 m s r q ja =95 c/w AON3814 20v n-channel mosfet www.freescale.net.cn 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr AON3814 20v n-channel mosfet www.freescale.net.cn 5 / 5
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